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General Description of MRF224

 
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seekic



Joined: 27 Jul 2010
Posts: 2

PostPosted: Tue Jul 27, 2010 2:46 am    Post subject: General Description of MRF224 Reply with quote

The MRF224, Which is designed for 12.5 Volt VHF large-signal power amplifier applications required in commercial and industrial equipment operating to VHF frequencies, is a kind of NPN Silicon RF power transistor.
There are some features as follows:
(1) Output power: 40 W;
(2) Specified 12.5 Volt, 175MHz characteristics;
(3) Minimum gain: 4.5 dB;
(4) Minimum efficiency: 70 %.
The maximum ratings of MRF224 can be summarized as follows:
(1) Emitter-base voltage (VEBO): 4.0 Vdc;
(2) Collector-base voltage (VCBO): 36 Vdc;
(3) Collector-emitter voltage (VCEO): 18 Vdc;
(4) Collector current continuous(IC): 7.0 Adc;
(5) Stud torque: -6.5 to In-Lb;
(6) Storage temperature range (Tstg): -65℃ to 200℃;
(7) Total device dissipation (PD): 80 W at TA is 25℃;
(7) Minimum collector-emitter breakdown voltage is 18 Vdc at IC is 100 mAdc and IB is 0;
(Cool Minimum emitter-base breakdown voltage is 4.0 Vdc when IE is 10 mAdc and IC is 0;
(9) Maximum collector cutoff current is 10 mAdc at VCE is 15 Vdc,VBE is 0 and TC is 25℃
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